Complementi di elettronica. Front Cover. Franco Zappa, Rita Zappa. Esculapio, – Technology & Engineering – pages. 3 results for Books: “Franco Zappa”. Product Details ยท Microcontrollers: Product Details. Fondamenti di Elettronica. by Franco Zappa, Rita Zappa. Franco Zappa is the author of Elettronica ( avg rating, 4 ratings, 0 reviews, published ), Microcontrollers ( avg rating, 0 ratings, 0 reviews.

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Skip to main content. Log In Sign Up. In fact, lattice very low noise and sharp timing response. We present the dislocations and generation-recombination centers could investigation on the breakdown voltage, photon detection increase thermal generation, band-to-band tunneling efficiency PDEdark count rate DCR and timing response on contributions and carrier trapping, thus affecting also devices with different dimensions and shapes of the active area.

Often these approaches resulted in drastic drawbacks in active area dimensions of elettronicz a few I. Such detectors will be the building block for SPAD technologies, which allow the complete tailoring of fabrication smart pixels of advanced 2D and 3D imagers with single- parameters and processing conditions in order to achieve photon sensitivity and in-pixel processing.

Elettronica digitale. Famiglie logiche, componenti digitali, reti …

Main drawbacks of custom processing are costs and mainly, the impossibility to monolithically integrate SPADs and their surrounding electronics on the same chip substrate. Hence the difficulty to fabricate wlettronica with very large pixel counts without employing wafer-bonding approaches.


Cross-section of the SPAD in 0. At this bias, the detector works in the so- called E,ettronica and a single photo carrier injected into the depletion layer can trigger a self-sustaining avalanche process. As a consequence, a single photon absorbed by the Silicon in which the SPAD is fabricated produces a standard, macroscopic milliampsand fast sub-nanosecond rising- edge current pulse, which marks the arrival time of the detected photon [9].

The device is monolithically integrated with an active Fig. The structure of the device itself is shown and shapes, as a function of the temperature and at different applied in Fig. Dark Count Rate preventing edge breakdown. All the measurements, except the ones for the assisted or band-to-band. Breakdown Voltage with an overvoltage of 5 V, all the SPAD structures have The breakdown voltage VBD was measured as a function extremely low dark count rates with a maximum of 43 cps for of the temperature, using a curve tracer and a climatic the biggest SPAD and a minimum of 6 cps for the smallest chamber.

The results show a homogeneous breakdown voltage one.

Complementi di elettronica – Franco Zappa, Rita Zappa – Google Books

Photon detection efficency as a function of the wavelength b and the excess bias voltage VEX for different structures. Timing waveforms showing the effect of substrate biasing increases with the overvoltage because the triggering probability and wavelength on FWHM and exponential tail. At nm wavelength, increases. Both timing waveforms show a secondary peak caused by a reflection of the laser pulse; in the first figure, the faint peak C.

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The results show also an enhanced efficiency in the ultraviolet Timing responses were characterized by Time-Correlated region, and still good values in the near-infrared range.

Franco Zappa (Author of Elettronica)

The whole system had an overall jitter of 19 ps. Because of the excellent Topics Quantum the substrate is short-circuited to the cathode, i.

The very low dark counting rate and the absence of the [5] F. Pifferi, with an active area equivalent to a Remember me on this computer.

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